npn buw13 - BUW13A comset semiconductors 1/3 the buw13-a are silicon npn power transistor in to3pn package. they are intended for use in switching regulators, motor control systems, inverters and converters. compliance to rohs. absolute maximum ratings symbol ratings value unit buw13 BUW13A v ceo collector-emitter voltage i b = 0 400 450 v v cbo collector-base voltage i e = 0 850 1000 v v ebo emitter-base voltage i c = 0 9 v i c collector current 15 a i cm collector current peak 30 a i b base current 6 a i bm base current peak 9 a p t total power dissipation @ t c = 25 175 watts t j junction temperature 150 c t st g storage temperature -65 to 175 c thermal characteristics symbol ratings value unit r thjc thermal resistance, junction to case 0.7 c/w h h i i g g h h v v o o l l t t a a g g e e , , h h i i g g h h s s p p e e e e d d p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r
npn buw13 - BUW13A 29/09/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit v ceo(sus) collector-emitter sustaining voltage i c = 100 ma , i b = 0 a l= 25 mh buw13 400 - - v BUW13A 450 - - i ces collector cutoff current v ce = v cemax v be = 0 v buw13 - - 1 ma BUW13A v ce = v cemax , v be = 0 v t case = 125c buw13 - - 4 BUW13A i ebo emitter cutoff current v eb = 9 v, i c = 0 a buw13 - - 10 ma BUW13A v ce(sat) collector-emitter saturation voltage i c = 10 a , i b = 2 a buw13 - - 1.5 v i c = 8 a , i b = 1.6 a BUW13A v be(sat) base-emitter saturation voltage i c = 10 a , i b = 2 a buw13 - - 1.6 i c = 8 a , i b = 1.6 a BUW13A h fe dc current gain i c =20 ma , v ce =5 v buw13 10 - 35 - BUW13A i c =1.5 a , v ce =5 v buw13 10 - 35 BUW13A switching times symbol ratings test condition(s) min typ mx unit t on turn-on time for buw13 i c = 10 a , i b1 = -i b2 = 2 a for BUW13A i c = 8 a , i b1 = -i b2 = 1.6 a - 1.2 1.5 s t s storage time - 0.6 1.1 t f file time - 0.17 0.25
npn buw13 - BUW13A 29/09/2012 comset semiconductors 3/3 mechanical data case to3pn n on isolated plastic package revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter
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